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                研发与创新

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                • Reliability concern of quasi-vertical GaN Schottky barrier diode under high temperature reverse bias stress

                  Sheng Li a, Chi Zhang a, Siyang Liu a, Jiaxing Wei a, Long Zhang a, Weifeng Sun a,*,

                  Youhua Zhu b, Tingting Zhang c, Dongsheng Wang c, Yinxia Sun c

                  a National ASIC System Engineering Research Center, School of Electronic Science and Engineering, Southeast University, Nanjing, 210096, China

                  b School of Electronics and Information, Nantong University, Nantong, 226019, China

                  c CorEnergy Semiconductor Co., LTD, Zhangjiagang, 215600, China

                  View the article online for updates and enhancements.

                • Integrated GaN MIS-HEMT with Multi-Channel Heterojunction SBD Structures

                  Sheng Li, Siyang Liu, Chi Zhang, Jiaxing Wei, Long Zhang, Weifeng Sun* National ASIC System Engineering Research Center Southeast University Nanjing, China

                  Youhua Zhu, Tingting Zhang, Dongsheng Wang, Yinxia Sun, Yiheng Li, Tinggang Zhu CorEnergy Semiconductor Co., LTD Zhangjiagang, China

                  View the article online for updates and enhancements.

                • Investigations of the gate instability characteristics in Schottky/ohmic type p-GaN gate normally-off AlGaN/GaN HEMTs

                  To cite this article: Changkun Zeng et al 2019 Appl. Phys. Express 12 121005

                  View the article online for updates and enhancements.

                • Effects of the cap layer on the properties of AlN barrier HEMT grown on 6-inch Si(111) substrate

                  To cite this article: Yuanyang Xia et al 2020 Mater. Res. Express 7 065902

                  View the article online for updates and enhancements.

                • Investigations of the gate-instability characteristics in Schottky/ohmic type p-Gan gate normally-off AIGan/Gan HEMTs

                  Changkun Zeng,Weizong Xu,Yuanyang Xia,Danfeng Pan,Yiwang Wang,Qiang Wang,Youhua Zhu,Fangfang Ren,Dong ZHou,Jiandong Ye,Dunjun Chen,Rong Zhang,Youdou Zheng,and Hai Lu

                  2019 The Japan Society of Applied Physics

                  https://doi.org/10.7567/1882-0786/ab52cc

                • Effects of the cap layer on the properties of ALN barrier HEMT grown on 6-inch Si(111) substrate

                  Yuanyang Xia,Youhua Zhu,Chunhua Liu,Hongyuan Wei,Tingting Zhang,YeehengLee,TinggangZhu,Meiyu wang,Li Yi and MeiGe

                  IOP Publishing   Mater.Res.Express 7(2020)065902

                  https://doi.org/10.1088/2053-1591/ab96f5

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